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ARM formed a company to develop CeRAM technologies – solid state memory with outstanding performance
ARM announced the creation of a new company – Cerfe Labs, which has transferred patents, assets and specialists for the development and licensing of non-volatile memory CeRAM. CeRAM is a form of resistive memory and promises to be a new “flash memory” with outstanding performance.
CeRAM promises easy scaling versus ReRAM and other benefits
Cerfe Labs Grants 150 CeRAM Patent Families. Cerfe Labs is led by Eric Hennenhoefer and CTO is Greg Yeric – both veterans of the ARM research department and both have worked on CeRAM and other emerging memory technologies in recent years.
It should be said that the inventor of CeRAM memory is considered to be Symetrix Corporation, with which ARM began to jointly develop on this topic six years ago. Actually, Cerfe Labs will shoulder the burden of further partnership with Symetrix, and the immediate goal of Cerfe Labs is to create prototypes of CeRAM memory and license the technology to interested companies.
Also, Cerfe Labs will continue to jointly research ARM and Symetrix in the field of ferroelectric memory (ferroelectric transistors, FeFET), also invented by Symetrix. Both new types of memory, importantly, are supported by the DARPA program for the revival of the US electronics industry (ERI FRANC). As part of the program, ARM and Symetrix have studied promising materials for the new memory and conducted a series of encouraging experiments to create MLC cells on the new memory.
In conclusion, let us explain that CeRAM is a more stable version of resistive memory with all the ensuing consequences: low latency, high switching speed, reliability, wear resistance, and so on. But the main thing is that CeRAM resistive junctions (cells) behave more predictably (as the developers claim) than ReRAM cells based on conducting ionic filaments and the like.
The current-voltage characteristic of the CeRAM cell shows two stable state switching voltages (0.8 and 1.6 V)
It is interesting to add that CeRAM exploits phenomena in the crystal lattice of materials that were not previously taken into account. Namely – the correlation of electrons or, if simpler, tunneling effects (transitions) of electrons from one atom of the material to another (conductivity) based on the mutual influence of electrons, and not under the action of Coulomb repulsion or hopping, as is commonly believed in the theory of solids.
It will be interesting to know the characteristics of the prototype. And this is clearly a matter of the near future, since it came to the creation of a separate company.