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The development of semiconductor technological processes will serve as carbon nanotubes
09.10.2021 [19:40],
Gennady Detinich

Further downscaling of semiconductor manufacturing processes is unthinkable without the use of EUV scanners. These scanners will both increase power to increase the processing speed of silicon wafers and increase optical resolution. But this is associated with a whole heap of technical problems, which scientists from the Belgian research center Imec promise to solve.

Carbon nanotube film to protect photomasks from contamination and burnout during EUV projection (Imec)

The main difficulty in operating EUV scanners with ultra-hard ultraviolet radiation sources is that it requires physical protection of silicon and photomasks, since the radiation of scanners affects them destructively. This raises the demand for protective films. The radiation power of today’s EUV scanners fluctuates around 250 W, but it will have to be doubled or even more. What can protect silicon and a photomask from burnout, and a photomask, additionally, from contamination??

To this end, Imec researchers have developed and tested a protective film made from carbon nanotubes. Experiments on the ASML NXE: 3300 EUV scanner showed that the transparency of composite nanotube films (per scan) was 97%. This means that a minimum of optical distortion will be introduced into the mask pattern, which is a photomask of the future microcircuit, and, moreover, they can be compensated altogether by setting the exposure mode.

Radiation of the EUV range is easily absorbed by materials, and creating a protective film with the highest transparency (for affecting the photosensitive layer) is a very, very difficult task. The use of a multilayer film of carbon nanotubes, which was proposed at Imec, solves this problem and is able to withstand the radiation of the scanner with a source power of up to 600 W.

In this case, the protective film is located a few millimeters from the photomask. It protects the mask and its pattern from foreign particles. Since the protective film is out of focus of the scanner’s radiation source, all the debris accumulated on it does not distort the pattern on the photomask. But this research is not over. Further, scientists will focus on increasing the service life of protective films and on the development of technical processes for their mass production. In five years, such films may be needed by the semiconductor industry as air. Without them, progress in EUV lithography can be difficult.

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