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Eclipse java ide download for windows 10 64 bit


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SK Hynix releases 176-layer TLC 4D NAND test samples. It is the most multilayer flash memory in the world
07.12.2021 [11:32],
Alexey Razin

Korean company SK Hynix uses the term “4D NAND” deliberately, but warns that it is intended to reflect layout advantages over 3D NAND. In the third generation, this memory became 176-layer, and controller developers have already received samples of 512-gigabit chips. Next Generation 4D NAND Mass Production Commences Mid Next Year.

Image source: SK Hynix

As the manufacturer explains, the next-generation TLC chips combine gate technology with a charge trap and a layout that places peripheral circuits under an array of memory cells. First introduced in 20221 in a 96-layer version, this third generation memory offers 176 layers. According to SK Hynix, this memory provides the highest chip yield from a single silicon wafer, increasing the specific manufacturing efficiency by 35% compared to the previous generation. Memory production costs are also falling, giving the Korean company an edge over its competitors.

Image source: SK Hynix

The new memory provides an increase in the speed of information transfer on read operations by 20%. In the middle of next year, mass production of 176-layer TLC 4D NAND memory chips for mobile devices will begin, their maximum read speed will increase by 70%, write – by 35%. In the future, such memory chips will find application in consumer and corporate solid-state drives. SK Hynix’s next target is Terabit TLC 4D NAND chips with 176-layer layout.

Micron Technology last month announced the completion of development and the beginning of shipments of the world’s first 176-layer 3D NAND memory chips, so you can be sure that SK Hynix will face competition from it.

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